| PART |
Description |
Maker |
| BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 |
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 300 V, SILICON, RECTIFIER DIODE
VGA VIDEO CABLE 100 FT MM 25 A, 100 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 600 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 400 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
Diotec Elektronische
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TMPG06-30A TMPG06-6.8AHE3_54 TMPG06-36A TMPG06-9.1 |
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| HTSC429.XXX-1812 |
High Temperature Silicon Capacitor
|
List of Unclassifed Manufacturers
|
| MPXV5050V |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| BYZ50A2209 BYZ50A33 BYZ50A39 BYZ50A27 BYZ50K22 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
| BYZ50A22 BYZ35A22 BYZ35A27 BYZ35A33 BYZ35A37 BYZ35 |
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
SEMIKRON[Semikron International]
|
| MPXV6115V MPXV6115VC6T1 MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXHZ6115AC6U MPXAZ6115A MPXAZ6115A6T1 MPXAZ6115A6 |
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
FREESCALE[Freescale Semiconductor, Inc]
|
